CHARACTERIZATION OF PIEZOELECTRIC PROPERTIES OF PZT THIN-FILMS DEPOSITED ON SI BY ECR SPUTTERING

被引：38

作者：

TOYAMA, M

KUBO, R

TAKATA, E

TANAKA, K

OHWADA, K

机构：

[1] Yokohama Researcn and Development Center, Murata Manufacturing Co., Ltd., Midori-ku, Yokohama, 226

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1994年 / 45卷 / 02期

关键词：

ELECTRON CYCLOTRON RESONANCE; LEAD ZIRCONATE TITANATE; PIEZOELECTRIC PROPERTIES; SILICON;

D O I：

10.1016/0924-4247(94)00828-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric lead zirconate titanate (PZT) thin films are deposited at a low substrate temperature (530-590-degrees-C) by an electron cyclotron resonance (ECR) sputtering method using two targets: a ceramic PZT and a lead metal target. Si wafers are employed as substrates. The piezoelectric constant epsilon31 is 2.1 C m-2 without poling treatment for a PZT film deposited at 550-degrees-C.

引用

页码：125 / 129

页数：5

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