STATE DENSITY IN THE VALENCE BAND OF SILICON

被引：7

作者：

HAGSTRUM, HD

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(59)90318-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：211 / 216

页数：6

共 14 条

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