PHOTOCONDUCTIVITY AND HALL-EFFECT OF IRON-DIFFUSED SILICON

被引：18

作者：

SCHMIDT, C

机构：

来源：

APPLIED PHYSICS | 1978年 / 17卷 / 02期

关键词：

D O I：

10.1007/BF00885245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：137 / 140

页数：4

共 12 条

[1]

ABDUGAFUROVA MA, 1975, SOV PHYS SEMICOND+, V8, P1409

[2]

BENDIK NT, 1970, SOV PHYS-SOLID STATE, V12, P1340

[3]

BOLTAKS BI, 1972, FIZ TVERD TELA+, V13, P2240

[4]

CHEN JW, 1976, P NATL WORKSHOP LOW

CHU, TL ;

SINGH, KN .

[6] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J].

COLLINS, CB ;

CARLSON, RO .

PHYSICAL REVIEW, 1957, 108 (06) :1409-1414

[7]

DEMIDOV ES, 1975, SOV PHYS SEMICOND+, V8, P919

[8] QUENCHED-IN DEFECT IN BORON-DOPED SILICON [J].

GERSON, JD ;

CHENG, LJ ;

CORBETT, JW .

[9]

LEE YH, 1977, APPL PHYS LETT, V31, P142, DOI 10.1063/1.89630

[10] SOLUBILITY AND DIFFUSIVITY OF GOLD, IRON, AND COPPER IN SILICON [J].

STRUTHERS, JD .