OPTICAL AND PHOTOVOLTAIC CHARACTERISTICS OF IN-MODIFIED SNO2 THIN-FILMS

被引:43
作者
BADAWY, WA [1 ]
AFIFY, HH [1 ]
ELGIAR, EM [1 ]
机构
[1] NATL RES CTR,SOLID STATE PHYS LAB,CAIRO,EGYPT
关键词
D O I
10.1149/1.2086733
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
SnO2 thin films were prepared conveniently and reproducibly using the spray-pyrolysis technique. This method enables the incorporation of foreign materials like indium in the SnO2 matrix. The effect of In incorporation on the conductivity and optical properties of the prepared films was studied. The presence of In in the bulk of the film increases its conductivity and does not affect the optical properties to a significant extent. The energy gap of the prepared SnO2 films was calculated for different layer thickness of pure and In-incorporated SnO2 films. Heterojunction n-Si/SnO2-In solar cells were prepared and investigated using a standard potentiostatic technique. The power characteristics of the prepared photovoltaic cells were analyzed and compared with those of pure SnO2/Si solar cells. © 1990, The Electrochemical Society, Inc. All rights reserved.
引用
收藏
页码:1592 / 1595
页数:4
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