HIGHLY SENSITIVE PHOTODETECTOR USING POROUS SILICON

被引：179

作者：

ZHENG, JP ^{[1
]}

JIAO, KL ^{[1
]}

SHEN, WP ^{[1
]}

ANDERSON, WA ^{[1
]}

KWOK, HS ^{[1
]}

机构：

[1] SUNY BUFFALO,DEPT ELECT & COMP ENGN,BUFFALO,NY 14260

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.107884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A highly sensitive photodetector was made with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075-mu-m. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630-900 nm without any antireflective coating. The detector response time was about 2 ns with a 9 V reverse bias. The possible mechanisms are discussed.

引用

页码：459 / 461

页数：3

共 7 条

[1] INVESTIGATIONS OF THE ELECTRICAL-PROPERTIES OF POROUS SILICON [J].