REACTIVE ION ETCHING OF ALUMINUM USING SICL4

[1] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[2] Hosokawa N, 1974, JPN J APPL PHYS S, V13, P435

[3] POULSEN RG, 1976, DEC P INT EL DEV M W, P205

[4] REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS IN AN RF PLASMA CONTAINING HALOGEN SPECIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 334 - 337

[5] ENDPOINT DETERMINATION OF ALUMINUM REACTIVE ION ETCHING BY DISCHARGE IMPEDANCE MONITORING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 385 - 387

[1] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[2] Hosokawa N, 1974, JPN J APPL PHYS S, V13, P435

[3] POULSEN RG, 1976, DEC P INT EL DEV M W, P205

[4] REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS IN AN RF PLASMA CONTAINING HALOGEN SPECIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 334 - 337

[5] ENDPOINT DETERMINATION OF ALUMINUM REACTIVE ION ETCHING BY DISCHARGE IMPEDANCE MONITORING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 385 - 387