GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS HAVING NON-PARABOLIC ENERGY-BANDS

被引：48

作者：

CHAKRAVARTI, AN ^{[1
]}

NAG, BR ^{[1
]}

机构：

[1] UNIV CALCUTTA, COLL SCI & TECHNOL, INST RADIO PHYS & ELECTR, 92 ACHARYA PRAFULLACHANDRA RD, CALCUTTA 9, INDIA

来源：

关键词：

D O I：

10.1080/00207217408900521

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：281 / 284

页数：4

共 7 条

[1]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

CHAKRAVARTI, AN ;

PARUI, DP .

CHAKRAVARTI, AN ;

PARUI, DP .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 10 (02) :K141-+

[4] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

[5] ON THE DIFFUSION THEORY OF RECTIFICATION [J].

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1952, 213 (1113) :226-237

[6] GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS [J].

LINDHOLM, FA ;

AYERS, RW .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :371-&

[7]

SPENKE E, 1958, ELECTRONIC SEMICONDU