EPITAXIAL-GROWTH OF SILICON - A MOLECULAR-DYNAMICS SIMULATION

被引：138

作者：

SCHNEIDER, M ^{[1
]}

SCHULLER, IK ^{[1
]}

RAHMAN, A ^{[1
]}

机构：

[1] UNIV MINNESOTA,SCH PHYS & ASTRON,INST SUPERCOMP,MINNEAPOLIS,MN 55455

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.36.1340

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1340 / 1343

页数：4

共 15 条

[1] PULSED MELTING OF SILICON (111) AND (100) SURFACES SIMULATED BY MOLECULAR-DYNAMICS
ABRAHAM, FF
BROUGHTON, JQ
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (07) : 734 - 737
[2] MOLECULAR-DYNAMICS SIMULATION OF SILICON CLUSTERS
BLAISTENBAROJAS, E
LEVESQUE, D
[J]. PHYSICAL REVIEW B, 1986, 34 (06): : 3910 - 3916
[3] EVALUATION OF THE STILLINGER-WEBER CLASSICAL INTERACTION POTENTIAL FOR TETRAGONAL SEMICONDUCTORS IN NONIDEAL ATOMIC CONFIGURATIONS
DODSON, BW
[J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7361 - 7363
[4] FRAGMENTATION OF SILICON MICROCLUSTERS - A MOLECULAR-DYNAMICS STUDY
FEUSTON, BP
KALIA, RK
VASHISHTA, P
[J]. PHYSICAL REVIEW B, 1987, 35 (12) : 6222 - 6239
[5] FEUSTON BP, COMMUNICATION
[6] FACETING AT THE SILICON (100) CRYSTAL-MELT INTERFACE - THEORY AND EXPERIMENT
LANDMAN, U
LUEDTKE, WD
BARNETT, RN
CLEVELAND, CL
RIBARSKY, MW
ARNOLD, E
RAMESH, S
BAUMGART, H
MARTINEZ, A
KHAN, B
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (02) : 155 - 158
[7] Leamy H. J., 1980, Current topics in materials science. Vol.6, P309
[8] Matthews J.W, 1975, EPITAXIAL GROWTH
[9] Ray J, COMMUNICATION
[10] ROLE OF RELAXATION IN EPITAXIAL-GROWTH - A MOLECULAR-DYNAMICS STUDY
SCHNEIDER, M
RAHMAN, A
SCHULLER, IK
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (06) : 604 - 606