OPTICAL ANISOTROPY IN INAS/ALSB SUPERLATTICES

被引:24
作者
SANTOS, PV [1 ]
ETCHEGOIN, P [1 ]
CARDONA, M [1 ]
BRAR, B [1 ]
KROEMER, H [1 ]
机构
[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 12期
关键词
D O I
10.1103/PhysRevB.50.8746
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical anisotropy in the layer plane of (100) InAs/AlSb superlattices was investigated by ellipsometry and by reflection difference spectroscopy. The superlattices are anisotropic in the (100) plane with the dielectric function along the [011] and [011] axes differing by as much as similar to 5% in the energy range from 2 to 4 eV. The anisotropy in superlattices with either only AlAs or only InSb interface bonds is attributed to a reduction of the D-2d symmetry of a perfect structure due to differences between the interfaces where InAs is grown on AlSb and those where AlSb is deposited on InAs. Different mechanisms for the interface-related anisotropy are discussed.
引用
收藏
页码:8746 / 8754
页数:9
相关论文
共 31 条
[1]   A REFLECTANCE ANISOTROPY SPECTROMETER FOR REAL-TIME MEASUREMENTS [J].
ACHER, O ;
DREVILLON, B .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (11) :5332-5339
[2]   MEASUREMENTS OF ABOVE-BANDGAP OPTICAL ANISOTROPIES IN THE (001) SURFACE OF GAAS [J].
ACOSTAORTIZ, SE ;
LASTRASMARTINEZ, A .
SOLID STATE COMMUNICATIONS, 1987, 64 (05) :809-811
[3]  
ALEINER IL, 1992, JETP LETT+, V55, P692
[4]   ANISOTROPIES IN THE ABOVE BAND-GAP OPTICAL-SPECTRA OF CUBIC SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW LETTERS, 1985, 54 (17) :1956-1959
[5]   ANALYSIS OF MODULATION SPECTRA OF STRATIFIED MEDIA [J].
ASPNES, DE .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1973, 63 (11) :1380-1390
[6]   APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1327-1332
[7]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[8]   ABOVE-BANDGAP OPTICAL ANISOTROPIES IN CUBIC SEMICONDUCTORS - A VISIBLE NEAR ULTRAVIOLET PROBE OF SURFACES [J].
ASPNES, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1498-1506
[9]   INTERFACE ROUGHNESS SCATTERING IN INAS/ALSB QUANTUM-WELLS [J].
BOLOGNESI, CR ;
KROEMER, H ;
ENGLISH, JH .
APPLIED PHYSICS LETTERS, 1992, 61 (02) :213-215
[10]   WELL WIDTH DEPENDENCE OF ELECTRON-TRANSPORT IN MOLECULAR-BEAM EPITAXIALLY GROWN INAS/ALSB QUANTUM-WELLS [J].
BOLOGNESI, CR ;
KROEMER, H ;
ENGLISH, JH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :877-879