SURFACE EFFECTS ON POSITRON ANNIHILATION IN SILICON POWDERS

被引：19

作者：

GAINOTTI, A

GHEZZI, C

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.24.349

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：349 / &

共 7 条

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[5] POSITRON ANNIHILATION IN SEMICONDUCTORS
FIESCHI, R
GAINOTTI, A
GHEZZI, C
MANFREDI, M
[J]. PHYSICAL REVIEW, 1968, 175 (02): : 383 - &
[6] MANY A, 1965, SEMICONDUCTOR SURFAC, P392
[7] POSITRON LIFETIMES IN METALS
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BERKO, S
[J]. PHYSICAL REVIEW, 1967, 154 (02): : 249 - &