HIGH PHOTOVOLTAGES IN CADMIUM SULFIDE FILMS

被引：17

作者：

BRANDHOR.HW

ACAMPORA, FL

POTTER, AE

机构：

[1] Lewis Research Center, National Aeronautics and Space Administration, Cleveland, OH

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 13期

关键词：

D O I：

10.1063/1.1656118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Larger-than-bandgap photovoltages were observed in thin films of CdS which had high resistances and were not uniformly thick. The decay of the photovoltage after removal of light and the effects of temperature and light intensity on the photovoltage were studied and compared to a theoretical model. The results conform with the concept that the photovoltage is due to a space charge produced by a nonuniform distribution of trapped carriers in a multitude of series-connected elements. Analysis of the decay of the photovoltage showed the presence of at least four trapping levels at 0.08, 0.14, 0.26, and 0.41 eV. © 1969 The American Institute of Physics.

引用

页码：6071 / &

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