GROWTH OF ALKALI-HALIDES BY MOLECULAR-BEAM EPITAXY

被引：70

作者：

YANG, MH ^{[1
]}

FLYNN, CP ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.41.8500

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Alkali halide single crystals are shown to grow well from molecular beams over a wide temperature range (0.10.5)Tm, where Tm is the melting temperature. Growth characteristics for homoepitaxy and heteroepitaxy, for alloys and superlattices, are discussed and found systematically different from those of metals and semiconductors. The reasons are related here to the type of lattice cohesion. © 1990 The American Physical Society.

引用

页码：8500 / 8508

页数：9

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