PHOTOLUMINESCENCE AND STRUCTURAL CHARACTERIZATION OF MEV ERBIUM-IMPLANTED SILICA GLASS

被引：14

作者：

POLMAN, A ^{[1
]}

JACOBSON, DC ^{[1
]}

LIDGARD, A ^{[1
]}

POATE, JM ^{[1
]}

ARNOLD, GW ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷 / pt 2期

关键词：

D O I：

10.1016/0168-583X(91)95819-Y

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Suprasil glass (amorphous SiO2) has been implanted with 2.9 MeV Er ions at fluences of 3.4 x 10(15) and 3.4 x 10(16) ions/cm2. Photoluminescence spectra of implanted samples show a clear luminescent transition around lambda = 1.54-mu-m, corresponding to an intra-4f transition of Er3+. Flourescence decay times are in the range 1-8 ms, depending on implantation fluence and annealing treatment. UV absorption and IR reflection spectroscopy are employed to characterize beam-induced defects in the silica network. The results indicate that defects in the silica network play an important role in the energy transfer processes in the Er: silica system.

引用

页码：1313 / 1316

页数：4

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