HIGH-TEMPERATURE LIMIT OF NON-RADIATIVE MULTIPHONON CARRIER-CAPTURE CROSS-SECTIONS OF DEEP TRAPS IN SEMICONDUCTORS

被引：13

作者：

PASSLER, R ^{[1
]}

机构：

[1] TH KARL MARX STADT, SEKT PHYS ELEKTR BAUELEMENTE, DDR-90 KARL MARX STADT, GER DEM REP

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1977年 / 83卷 / 01期

关键词：

D O I：

10.1002/pssb.2220830153

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K55 / K58

页数：4

共 15 条

[11] PASSLER R, 1975, CZECH J PHYS, VB 25, P219, DOI 10.1007/BF01589478
[12] RELATIONSHIPS BETWEEN NONRADIATIVE MULTIPHONON CARRIER-CAPTURE PROPERTIES OF DEEP CHARGED AND NEUTRAL CENTERS IN SEMICONDUCTORS
PASSLER, R
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1976, 78 (02): : 625 - 635
[13] CALCULATION OF NONRADIATIVE MULTIPHONON CAPTURE COEFFICIENTS AND IONIZATION RATES FOR NEUTRAL CENTERS ACCORDING TO STATIC COUPLING SCHEME .2. ALTERNATIVE TRAP MODELS
PASSLER, R
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1976, 76 (02): : 647 - 659
[14] PASSLER R, 1974, CZECH J PHYS, VB 24, P322, DOI 10.1007/BF01596354
[15] SINYAVSK.EP, 1967, FIZ TVERD TELA+, V9, P1142