ELECTROREFLECTANCE OF IMPURITIES IN GAAS - MANGANESE SILICON AND CADMIUM

被引：11

作者：

WILLIAMS, EW

机构：

[1] Malvern, Worcs. England

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 07期

关键词：

D O I：

10.1016/0038-1098(69)90870-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Manganese impurities in GaAs can be seen in electroreflectance at 300°K. The electroreflectance peak due to manganese is at 1.36 eV for the heaviest doping used (1 × 1018 holes/cm3). Hydrogenic cadmium and silicon acceptors were observed and there is some evidence for hydrogenic silicon donors. © 1969.

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页码：541 / &

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