PHOTOLUMINESCENCE OF EPITAXIAL N-TYPE GAAS AT 20 DEGREES K

被引：25

作者：

WILLIAMS, EW

机构：

来源：

SOLID STATE COMMUNICATIONS | 1966年 / 4卷 / 11期

关键词：

D O I：

10.1016/0038-1098(66)90139-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：585 / &

共 13 条

[1]

CARDONA M, 1966, B AM PHYS SOC, V11, P272

[2] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J].

CUSANO, DA .

SOLID STATE COMMUNICATIONS, 1964, 2 (11) :353-358

[3] IDENTIFICATION OF LASER TRANSITIONS IN ELECTRON-BEAM-PUMPED GAAS (RECOMBINATION RADIATION FAST ELECTRON BEAM PUMPING IMPURITY EFFECTS E) [J].

CUSANO, DA .

APPLIED PHYSICS LETTERS, 1965, 7 (06) :151-&

[4] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE [J].

HILL, DE .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A) :A866-&

[5] EFFECTS OF ACCEPTOR CONCENTRATION GRADIENTS IN GAAS JUNCTIONS ON ENERGY OF FLUORESCENCE PEAK [J].

LUCOVSKY, G ;

VARGA, AJ .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (11) :3419-&

[6] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS AT 77 DEGREES K [J].

NATHAN, MI ;

BLUM, SE ;

BURNS, G ;

MARINACE, JC .

PHYSICAL REVIEW, 1963, 132 (04) :1482-&

[7] RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION [J].

NATHAN, MI ;

BURNS, G .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :89-90

[8]

QUEISSER HJ, 1966, B AM PHYS SOC, V11, P189

[9] ELECTROREFLECTANCE IN GAAS [J].

SERAPHIN, BO .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P) :239-&

[10] ELECTROREFLECTANCE STUDIES IN GAAS [J].

SERAPHIN, BO .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :721-&

← 1 2 →