CHARACTERISTICS OF BLOCH LINE MEMORY READ OPERATION IN 2-UM BUBBLE MATERIAL

被引：3

作者：

MATSUYAMA, K

CHIKAMATSU, K

ASADA, H

机构：

[1] Department of Electrical Engineering, Kyushu University, 36

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1990年 / 26卷 / 05期

关键词：

D O I：

10.1109/20.104782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The read operation performance in Bloch line memory has been studied using a typical 2 um bubble material. A reasonable operation margin for a chopping detection of vertical Bloch line was performed with a hair-pin type chopping conductor with the 4 um pattern width and 1.5 um pattern gap. The chopping current margin and the bias field margin are 146 mA ± 4.1 %, and 107 Oe ± 6.1 %, respectively. Domain wall configurations during the chopping process have been studied numerically, comparing with experimental results. © 1990 IEEE

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页码：2517 / 2519

页数：3

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