SCHOTTKY-BARRIER PHOTO-DIODES IN P HG1-XCDXTE

被引：24

作者：

POLLA, DL ^{[1
]}

SOOD, AK ^{[1
]}

机构：

[1] MIT, DEPT ELECT ENGN & COMP SCI, CAMBRIDGE, MA 02139 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.328363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4908 / 4912

页数：5

共 23 条

[1]

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[2]

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[3]

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[4]

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RUTHS, JM ;

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[6] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&

[7]

FONASH SJ, 1978, 13TH P IEEE PHOT SPE

[8] ELECTRON-BEAM EXCITED MINORITY-CARRIER DIFFUSION PROFILES IN SEMICONDUCTORS [J].

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JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1649-&

[9]

IVERSON RB, 1979, THESIS MASSACHUSETTS

[10] APPLICATION OF SCANNING ELECTRON-MICROSCOPY TO DETERMINATION OF SURFACE RECOMBINATION VELOCITY - GAAS [J].

JASTRZEBSKI, L ;

LAGOWSKI, J ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1975, 27 (10) :537-539

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