STRAIN EFFECTS IN THE INTERSUBBAND TRANSITIONS OF NARROW INGAAS QUANTUM-WELLS

被引：17

作者：

PENG, LH ^{[1
]}

SMET, JH ^{[1
]}

BROEKAERT, TPE ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期

关键词：

D O I：

10.1063/1.109382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Internal uniaxial stress effects on the degenerate P-like C2 subband Bloch states of Si-doped (001) InGaAs single quantum wells (SQWs) have been studied using polarization-resolved infrared spectroscopy. It is found that a tetragonal strain perturbation of the crystal potential produces a splitting between the TM and TE active intersubband transitions. The magnitude of the linear strain intersubband deformation potential of InGaAs quantum wells is 3 eV.

引用

页码：2413 / 2415

页数：3

共 12 条

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