MORPHOLOGY OF LPCVD SI3N4 FILMS AFTER HIGH-TEMPERATURE TREATMENT AND HF ETCHING

被引：10

作者：

BESHKOV, G

LAZAROVA, V

DIMITROV, DB

机构：

[1] Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia, 1784

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷

关键词：

D O I：

10.1016/0022-3093(95)00154-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of high temperature treatments in a nitrogen ambient at temperatures 1000 and 1100 degrees C and in water vapor at 900, 1000, and 1100 degrees C for 270 and 720 min on the structure, on the morphology and on the electrical properties of LPCVD Si3N4 layers has been investigated. The Si3N4 layers have been deposited by the LPCVD technique using the composition SiH2Cl2-NH3. The presence of a crystalline phase of alpha-Si3N4 has been established after 270 min annealing at 1000 degrees C in water ambient. A sharp change of the surface morphology of the layers has been observed after wet etching in 40% HF for 10 s.

引用

页码：301 / 307

页数：7