SPATIAL CHARGE-DISTRIBUTION IN ARSENIC-DEPOSITED AND UV-ILLUMINATED GATE-QUALITY NITROGEN-RICH SILICON-NITRIDE

被引：10

作者：

KANICKI, J

JOUSSE, D

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 06期

关键词：

D O I：

10.1109/55.31745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：277 / 279

页数：3

相关论文

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