ELECTRONIC STATES ON POINT-DEFECTS IN GLASSY AS2SE3

被引：2

作者：

MASEK, J

VELICKY, B

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1980年 / 100卷 / 01期

关键词：

D O I：

10.1002/pssb.2221000156

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K67 / K71

页数：5

共 11 条

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[7]

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[9] ELECTRONIC-STRUCTURE OF DEFECTS IN AMORPHOUS ARSENIC [J].

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[10] STATES IN GAP IN GLASSY SEMICONDUCTORS [J].

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