STORED CHARGE IN OXIDE LAYER STRUCTURES

[1] ANODIC OXIDE ELECTRETS [J]. ELECTRONICS LETTERS, 1969, 5 (19) : 462 - &

[2] Dearnaley G., 1970, Journal of Non-Crystalline Solids, V4, P593, DOI 10.1016/0022-3093(70)90097-9

[3] ELECTRONIC CONDUCTION THEORUGH THIN UNSATURATED OXIDE LAYERS [J]. PHYSICS LETTERS A, 1967, A 25 (10) : 760 - +

[4] GREENE PD, 1969, THIN FILM DIELECTRIC

[5] NONCRYSTALLINE STRUCTURE AND ELECTRONIC CONDUCTION OF SILICON DIOXIDE FILMS [J]. PHYSICA STATUS SOLIDI, 1967, 24 (01): : 115 - +

[6] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &

[7] VERDERBER RR, 1967, PHILOS MAG, V16, P1049

[8] INTRODUCTION OF CHARGE IN SIO2 AND INCREASE OF INTERFACE STATES DURING BREAKDOWN OF EMITTER-BASE JUNCTION OF GATED TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1969, 15 (08) : 270 - +

[1] ANODIC OXIDE ELECTRETS [J]. ELECTRONICS LETTERS, 1969, 5 (19) : 462 - &

[2] Dearnaley G., 1970, Journal of Non-Crystalline Solids, V4, P593, DOI 10.1016/0022-3093(70)90097-9

[3] ELECTRONIC CONDUCTION THEORUGH THIN UNSATURATED OXIDE LAYERS [J]. PHYSICS LETTERS A, 1967, A 25 (10) : 760 - +

[4] GREENE PD, 1969, THIN FILM DIELECTRIC

[5] NONCRYSTALLINE STRUCTURE AND ELECTRONIC CONDUCTION OF SILICON DIOXIDE FILMS [J]. PHYSICA STATUS SOLIDI, 1967, 24 (01): : 115 - +

[6] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &

[7] VERDERBER RR, 1967, PHILOS MAG, V16, P1049

[8] INTRODUCTION OF CHARGE IN SIO2 AND INCREASE OF INTERFACE STATES DURING BREAKDOWN OF EMITTER-BASE JUNCTION OF GATED TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1969, 15 (08) : 270 - +