ULTRAVIOLET AND EXTREME ULTRAVIOLET RESPONSE OF CHARGE-COUPLED-DEVICE DETECTORS

被引：29

作者：

STERN, RA

CATURA, RC

KIMBLE, R

DAVIDSEN, AF

WINZENREAD, M

BLOUKE, MM

HAYES, R

WALTON, DM

CULHANE, JL

机构：

[1] JOHNS HOPKINS UNIV, BALTIMORE, MD 21218 USA

[2] TEKTRONIX INC, BEAVERTON, OR 97077 USA

[3] MULLARD SPACE SCI LAB, DORKING, SURREY, ENGLAND

来源：

OPTICAL ENGINEERING | 1987年 / 26卷 / 09期

关键词：

IMAGE SENSORS - ULTRAVIOLET RADIATION;

D O I：

10.1117/12.7974165

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present results of a program to enhance the ultraviolet and extreme ultraviolet response of charge-coupled devices. The ultimate goal of our program is to develop a large format device with both high and stable quantum efficiency from 100 to 3000 A that can be used as a windowless imaging detector in a space environment. Ultraviolet quantum efficiency measurements have been made for several ion-implanted and laser-annealed test CCDs specially fabricated for this program. Quantum efficiencies as high as 22% at 2500 A, where the absorption depth in silicon is approx. 55 A, have been observed in one such test CCD. Quantum efficiency measurements of standard back-illuminated RCA and Tektronix CCDs are presented.

引用

页码：875 / 883

页数：9

共 18 条

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