ABSORPTION AND LUMINESCENCE OF BOUND EXCITON IN THALLIUM DOPED SILICON

被引：16

作者：

ELLIOTT, KR

SMITH, DL

MCGILL, TC

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(78)90044-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：317 / 320

页数：4

共 14 条

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[3] HROSTOWSKI HJ, 1959, SEMICONDUCTORS, pCH10
[4] KAMINSKII AS, 1970, JETP LETT-USSR, V11, P255
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[6] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI
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[7] FINE-STRUCTURE IN BOUND EXCITON AND MULTIPLE BOUND EXCITON LUMINESCENCE FROM ALUMINUM-DOPED SILICON
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (09): : L247 - L250
[8] BOUND EXCITON LIFETIMES FOR ACCEPTORS IN SI
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OSBOURN, GC
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MCGILL, TC
[J]. SOLID STATE COMMUNICATIONS, 1977, 23 (07) : 425 - 428
[9] EDGE LUMINESCENCE SPECTRA OF ACCEPTORS IN SI - IMPLICATIONS FOR MULTIEXCITON COMPLEXES
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MCGILL, TC
[J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2620 - 2624
[10] AUGER TRANSITION RATES FOR EXCITONS BOUND TO ACCEPTORS IN SI AND GE
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