SELF-DIFFUSION IN INTRINSIC SILICON

被引：66

作者：

KALINOWSKI, L

SEGUIN, R

机构：

[1] Centre d'Etudes Nucléaires de Saclay, Section de Recherches de Métallurgie Physique, 91190 Gir sur Yvette

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 03期

关键词：

D O I：

10.1063/1.91097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The silicon self-diffusion in intrinsic silicon was investigated by a new method using stable isotope 30Si and the ion-analyzer technique. The temperature dependence of the diffusion coefficient was obtained in the range from 885 to 1175°C from which an activation energy 110.6 kcal/mole was obtained.

引用

页码：211 / 213

页数：3

共 18 条

[1] Boltaks B.I., 1963, DIFFUSION SEMICONDUC
[2] BOURGOIN J, 1976, 19TH C MET CTR ET NU, V11, P695
[3] CASEY HC, 1975, DIFFUSION SEMICONDUC, P181
[4] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON
FAIRFIEL.JM
MASTERS, BJ
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3148 - &
[5] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON
FULLER, CS
DITZENBERGER, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553
[6] METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS
GHOSHTAGORE, RN
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 890 - +
[7] HU SM, 1973, ATOMIC DIFFUSION SEM, P248
[8] SILICON SELF-DIFFUSION - (CZOCHRALSKI SINGLE CRYSTAL - SI31 - TEMPERATURE DEPENDENCE - ACTIVATION ENERGY 118.5 KCAL/MOLE - 1100 TO 1300 DEGREES C - E)
MASTERS, BJ
FAIRFIELD, JM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (11) : 280 - +
[9] MAYER HJ, 1976, INT C RAD EFFECTS SE
[10] OSHCHERIN BN, 1963, PHYS STATUS SOLIDI, V3, pK61

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