RAMAN-SCATTERING BY PHONONS IN HEAVILY DOPED SEMICONDUCTORS

被引：6

作者：

DELACRUZ, GG ^{[1
]}

CONTRERASPUENTE, G ^{[1
]}

CASTILLOALVARADO, FL ^{[1
]}

MEJIAGARCIA, C ^{[1
]}

COMPAAN, A ^{[1
]}

机构：

[1] UNIV TOLEDO,TOLEDO,OH 43606

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 82卷 / 12期

关键词：

D O I：

10.1016/0038-1098(92)90722-L

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present in this work experimental results of the Full Width at Half Maximum (FWHM) and frequency shift of the Raman phonon in heavily doped Ge:P, as a function of the temperature. Phonon confinement is found due to the disorder induced by the impurities in the crystal.

引用

收藏

页码：927 / 929

页数：3

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