FRANZ-KELDYSH EFFECT IN AN OPTICAL WAVE-GUIDE CONTAINING A RESONANT-TUNNELING DIODE

被引：14

作者：

MCMEEKIN, SG

TAYLOR, MRS

VOGELE, B

STANLEY, CR

IRONSIDE, CN

机构：

[1] Department of Electronics and Electrical Engineering, University of Glasgow

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.112130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical modulation in a waveguide containing a resonant tunneling diode has been observed. The observations are in agreement with a model which assumes that the modulation effect is due to a Franz-Keldysh band-edge shift produced by the electric field developed over a depletion region association with operation of the resonant tunneling diode. The effect has device potential for optical modulation at microwave frequencies.

引用

页码：1076 / 1078

页数：3

共 9 条

[1]

ASPNES DE, 1992, PROPERTIES GALLIUM A, P157

[2] FUNDAMENTAL OSCILLATIONS UP TO 200 GHZ IN RESONANT TUNNELING DIODES AND NEW ESTIMATES OF THEIR MAXIMUM OSCILLATION FREQUENCY FROM STATIONARY-STATE TUNNELING THEORY [J].