EPITAXIAL LIFTOFF OF ALAS GAAS DOUBLE BARRIER RESONANT TUNNELING DIODES

被引：4

作者：

TSAO, AJ

REDDY, VK

NEIKIRK, DP

机构：

[1] Microelectronics Research Center, The University of Texas, Austin Austin

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 06期

关键词：

TUNNEL DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, the successful removal of AlAs/GaAs double barrier resonant tunnelling diodes from the substrate using the epitaxial liftoff technique is reported. Ohmic contacts were formed to the top and bottom of the devices, using indium-alloyed ohmic contacts for the backside of the lifted-off diodes. Room temperature peak-to-valley ratios of 3.4 with peak current densities of 50 kA/cm2 were obtained.

引用

页码：484 / 486

页数：3

共 5 条

[1] OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES [J].