THE ROLE OF COMPOUND FORMATION AND HETEROEPITAXY IN INDIUM-BASED OHMIC CONTACTS TO GAAS

[1] OHMIC CONTACTS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +

[2] THE ROLE OF GERMANIUM IN EVAPORATED AU-GE OHMIC CONTACTS TO GAAS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (01) : 7 - &

[3] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459

[4] DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 705 - 708

[5] CONTACT RESISTANCES OF SEVERAL METALS AND ALLOYS TO GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 709 - &

[6] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 471 - &

[7] REVIEW OF THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP III-V COMPOUND SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 541 - 550

[8] MODELS FOR OHMIC CONTACTS ON GRADED CRYSTALLINE OR AMORPHOUS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 543 - 550

[9] A STUDY OF GE-GAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4062 - 4069

[10] Walpole J. N., 1971, Journal of Applied Physics, V42, P5609, DOI 10.1063/1.1659990

[1] OHMIC CONTACTS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +

[2] THE ROLE OF GERMANIUM IN EVAPORATED AU-GE OHMIC CONTACTS TO GAAS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (01) : 7 - &

[3] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459

[4] DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 705 - 708

[5] CONTACT RESISTANCES OF SEVERAL METALS AND ALLOYS TO GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 709 - &

[6] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 471 - &

[7] REVIEW OF THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP III-V COMPOUND SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 541 - 550

[8] MODELS FOR OHMIC CONTACTS ON GRADED CRYSTALLINE OR AMORPHOUS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 543 - 550

[9] A STUDY OF GE-GAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4062 - 4069

[10] Walpole J. N., 1971, Journal of Applied Physics, V42, P5609, DOI 10.1063/1.1659990