THE ROLE OF GERMANIUM IN EVAPORATED AU-GE OHMIC CONTACTS TO GAAS

[1] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 141 - &

[2] DAVIDSON SM, 1975, SEP P EMAG 75 DEV EL, P107

[3] DAVIS LE, HDB AUGER ELECTRON S

[4] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3578 - +

[5] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4575 - &

[6] OUTMIGRATION OF GALLIUM FROM AU-GAAS INTERFACES [J]. ELECTRONICS LETTERS, 1975, 11 (24) : 574 - 575

[7] INTERNAL-FRICTION STUDY ON ALLOYING BEHAVIOR OF AU-GAAS CONTACT [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (11) : 1818 - 1819

[8] OHATA K, 1974, 12TH ANN P IEEE REL, P278

[9] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &

[10] PADOVANI FA, 1967, SOLID STATE ELECTRON, V10, P813

[1] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 141 - &

[2] DAVIDSON SM, 1975, SEP P EMAG 75 DEV EL, P107

[3] DAVIS LE, HDB AUGER ELECTRON S

[4] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3578 - +

[5] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4575 - &

[6] OUTMIGRATION OF GALLIUM FROM AU-GAAS INTERFACES [J]. ELECTRONICS LETTERS, 1975, 11 (24) : 574 - 575

[7] INTERNAL-FRICTION STUDY ON ALLOYING BEHAVIOR OF AU-GAAS CONTACT [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (11) : 1818 - 1819

[8] OHATA K, 1974, 12TH ANN P IEEE REL, P278

[9] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &

[10] PADOVANI FA, 1967, SOLID STATE ELECTRON, V10, P813