A STUDY OF GE-GAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY

被引：56

作者：

STALL, RA

WOOD, CEC

BOARD, K

DANDEKAR, N

EASTMAN, LF

DEVLIN, J

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[2] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.329254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4062 / 4069

页数：8

共 26 条

[1] BALLINGALL J, UNPUBLISHED
[2] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY
BARNES, PA
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 651 - 653
[3] GE-GAAS(110) INTERFACE FORMATION
BAUER, RS
MCMENAMIN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1444 - 1449
[4] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS
CHANDRA, A
WOOD, CEC
WOODARD, DW
EASTMAN, LF
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 645 - 650
[5] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS
CHANG, CY
FANG, YK
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &
[6] CONDUCTION PROPERTIES OF GE-GAAS1-XPX N-N HETEROJUNCTIONS
CHANG, LL
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (09) : 721 - &
[7] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735
[8] CRISTON A, 1979, SOLID STATE ELECTRON, V22, P141
[9] ELECTRICAL CHARACTERISTICS OF EPITAXIAL GERMANIUM FILMS VACUUM DEPOSITED ON SEMI-INSULATING GAAS UP TO THICKNESS OF 106 A - (DEPOSITION AT 475 AND 500 DEGREEES C RELATION OF CARRIER CONCENTRATION TO THICKNESS E)
DAVEY, JE
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (07) : 164 - &
[10] A MOLYBDENIUM SOURCE, GATE AND DRAIN METALLIZATION SYSTEM FOR GAAS-MESFET LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
DEVLIN, WJ
WOOD, CEC
STALL, R
EASTMAN, LF
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (08) : 823 - 829

← 1 2 3 →