A MOLYBDENIUM SOURCE, GATE AND DRAIN METALLIZATION SYSTEM FOR GAAS-MESFET LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

DEVLIN, WJ ^{[1
]}

WOOD, CEC ^{[1
]}

STALL, R ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 08期

关键词：

D O I：

10.1016/0038-1101(80)90098-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：823 / 829

页数：7

相关论文

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