NONLINEAR-TRANSMISSION SPECTRA OF POROUS SILICON - MANIFESTATION OF SIZE QUANTIZATION

被引：27

作者：

KLIMOV, VI

DNEPROVSKII, VS

KARAVANSKII, VA

机构：

[1] INST GEN PHYS,MOSCOW 117924,RUSSIA

[2] MOSCOW MV LOMONOSOV STATE UNIV,FAC PHYS,MOSCOW 119899,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 20期

关键词：

D O I：

10.1063/1.111493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Changes in the transmission of porous silicon layers induced by ultrashort laser pulses are studied by using picosecond pump and probe measurements. Bleaching bands attributed to the saturation of optical transitions in silicon wires or/and crystallites with nanometer dimensions are observed in time-resolved differential transmission spectra. The measured nonlinearity is characterized by a relatively high value of the third-order nonlinear susceptibility (almost-equal-to 10(-8) esu) and by fast relaxation dynamics (transmission recovery time is 30-40 ps).

引用

收藏

页码：2691 / 2693

页数：3

相关论文

共 21 条

[1] A MICROSTRUCTURAL STUDY OF POROUS SILICON [J].

BERBEZIER, I ;

HALIMAOUI, A .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (09) :5421-5425

[2] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].

CAMPBELL, IH ;

FAUCHET, PM .

SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741

[3] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[4] THEORETICAL ASPECTS OF THE LUMINESCENCE OF POROUS SILICON [J].

DELERUE, C ;

ALLAN, G ;

LANNOO, M .

PHYSICAL REVIEW B, 1993, 48 (15) :11024-11036

[5] STRONG OPTICAL NONLINEARITIES AND LASER-EMISSION OF SEMICONDUCTOR MICROCRYSTALS [J].

DNEPROVSKII, VS ;

KLIMOV, VI ;

OKOROKOV, DK ;

VANDYSHEV, YV .

SOLID STATE COMMUNICATIONS, 1992, 81 (03) :227-230

[6] POROUS SILICON AND SILOXENE - VIBRATIONAL AND STRUCTURAL-PROPERTIES [J].

FUCHS, HD ;

STUTZMANN, M ;

BRANDT, MS ;

ROSENBAUER, M ;

WEBER, J ;

BREITSCHWERDT, A ;

DEAK, P ;

CARDONA, M .

PHYSICAL REVIEW B, 1993, 48 (11) :8172-8183

[7]

GADELIS S, 1991, APPL PHYS LETT, V59, P2118

[8] 1ST-PRINCIPLES ANALYSIS OF ELECTRONIC STATES IN SILICON NANOSCALE QUANTUM WIRES [J].

HYBERTSEN, MS ;

NEEDELS, M .

PHYSICAL REVIEW B, 1993, 48 (07) :4608-4611

[9] SLOW DECAY DYNAMICS OF VISIBLE LUMINESCENCE IN POROUS SILICON - HOPPING OF CARRIERS CONFINED ON A SHELL REGION IN NANOMETER-SIZE SI CRYSTALLITES [J].

KANEMITSU, Y .

PHYSICAL REVIEW B, 1993, 48 (16) :12357-12360

[10]

KLIMOV VI, 1992, SOV PHYS-SOLID STATE, V34, P2472