ATOMIC-STRUCTURE OF THE SB/SI(100)-(2X1) SURFACE

被引:28
作者
CHO, JH
KANG, MH
机构
[1] Department of Physics, Pohang University of Science and Technology
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 08期
关键词
D O I
10.1103/PhysRevB.51.5058
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have determined the atomic structure of the Sb-covered Si(100) surface in one-monolayer coverage using the pseudopotential density-functional total-energy calculation scheme. Within a symmetric dimer model, we find that the equilibrium Sb-Sb dimer bond length and Sb-Si back bond length are 2.94 and 2.59, respectively, in good agreement with a surface-extended x-ray-absorption fine-structure measurement. In addition, the Si substrate recovers a bulklike geometry upon Sb adsorption: atomic displacements from the bulk positions are all within 0.03. We explain a large difference in the experimental Si 2p core-level spectra for Sb/Si(100) and As/Si(100) in terms of the extent of substrate relaxations upon adsorption. © 1995 The American Physical Society.
引用
收藏
页码:5058 / 5060
页数:3
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