OCCUPIED AND UNOCCUPIED SURFACE-STATES ON THE SINGLE-DOMAIN SI(100) - SB-2X1 SURFACE

被引：18

作者：

CRICENTI, A ^{[1
]}

BERNHOFF, H ^{[1
]}

REIHL, B ^{[1
]}

机构：

[1] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.48.10983

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Angle-resolved photoelectron spectroscopy and k-resolved inverse photoemission have been used to study the electronic structure of the Si(100):Sb-2 x 1 surface. For both techniques, one occupied and one unoccupied surface-state band has been mapped along the [010] and [011] directions. The surface shows semiconducting behavior with an estimated minimum band gap of 1.45 eV along the [010] direction.

引用

页码：10983 / 10986

页数：4

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