PRECURSOR STATES IN THE ADSORPTION OF SB4 ON SI(001)

被引：44

作者：

MO, YW

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.69.3643

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The surprising complexity of the reaction path of the dissociation of Sb4 on Si(001) is revealed by scanning tunneling microscopy (STM). Four distinct types of precursors are identified, which can be converted to the final state of two-dimer clusters through thermal annealing, or through a novel STM-tip-induced conversion. An effective energy barrier of 0.5 +/- 0.1 eV and an effective prefactor of approximately 10(3) Hz are measured for the thermal conversion of precursors to the final state. The results indicate that popular models assuming only one precursor state may fail for many semiconductor systems.

引用

页码：3643 / 3646

页数：4

共 19 条

[1] THE INTERACTION OF SB4 MOLECULAR-BEAMS WITH SI(100) SURFACES - MODULATED-BEAM MASS-SPECTROMETRY AND THERMALLY STIMULATED DESORPTION STUDIES [J].