PHYSICAL AND ELECTRICAL INVESTIGATIONS ON SILICON EPITAXIAL LAYERS ON SAPPHIRE SUBSTRATES

被引：10

作者：

MERCIER, J

机构：

来源：

关键词：

D O I：

10.1149/1.2407600

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：666 / +

页数：1

共 32 条

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[3]

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[5]

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[6] Infra-red spectra of silica [J].

Drummond, DG .

DUMIN, DJ .

[8] AUTODOPING OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J].

DUMIN, DJ ;

ROBINSON, PH .

FAHRENFORT, J .

SPECTROCHIMICA ACTA, 1961, 17 (07) :698-+

[10] CHEMICAL POLISHING OF SINGLE CRYSTAL A -ALUMINA USING SILICON [J].

FILBY, JD .