IDENTIFICATION OF AUGER ELECTRONS IN GAAS

被引：14

作者：

PANKOVE, JI

TOMASETTA, L

WILLIAMS, BF

机构：

来源：

PHYSICAL REVIEW LETTERS | 1971年 / 27卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.27.29

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：29 / +

页数：1

共 8 条

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[2]

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WAIDELICH, W .

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LANDSBERG, PT .

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[5] HIGH-ENERGY EMISSION IN GAAS ELECTROLUMINESCENT DIODES [J].

NATHAN, MI ;

MORGAN, TN ;

BURNS, G ;

MICHEL, AE .

PHYSICAL REVIEW, 1966, 146 (02) :570-&

[6] AUGER RECOMBINATION OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE AND SILICON [J].

NELSON, DF ;

CUTHBERT, JD ;

DEAN, PJ ;

THOMAS, DG .

PHYSICAL REVIEW LETTERS, 1966, 17 (25) :1262-&

[7] EFFECTS OF PLASMA SCREENING AND AUGER RECOMBINATION ON LUMINESCENT EFFICIENCY IN GAP [J].

SINHA, KP ;

DIDOMENICO, M .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (06) :2623-+

[8] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE [J].

SPITZER, WG ;

WHELAN, JM .

PHYSICAL REVIEW, 1959, 114 (01) :59-63

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