HIGH-ENERGY EMISSION IN GAAS ELECTROLUMINESCENT DIODES

被引：24

作者：

NATHAN, MI

MORGAN, TN

BURNS, G

MICHEL, AE

机构：

来源：

PHYSICAL REVIEW | 1966年 / 146卷 / 02期

关键词：

D O I：

10.1103/PhysRev.146.570

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：570 / &

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[8] LIGHT EMISSION FROM REVERSE BIASED GAAS + INP P-N JUNCTIONS
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NATHAN, MI
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) : 3543 - &
[9] DETERMINATION OF THE ACTIVE REGION IN LIGHT-EMITTING GAAS DIODES
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[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) : 70 - 71
[10] MORGAN TDB, TO BE PUBLISHED