SPECIFIC RESISTIVITY OF OHMIC CONTACTS TO N-TYPE DIRECT BAND-GAP III-V COMPOUND SEMICONDUCTORS

被引：9

作者：

CHO, SM ^{[1
]}

LEE, JD ^{[1
]}

LEE, HH ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT CHEM ENGN,GAINESVILLE,FL 32611

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 01期

关键词：

D O I：

10.1063/1.350297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contact resistivity curves are given in terms of intrinsic barrier height and doping level for ohmic contacts to n-type direct band-gap III-V semiconductor compounds, including Al(x)Ga1-xAs. The results are based on a rigorous treatment of carrier transport across the metal-semiconductor interface. They show that the resistivity behaves quite differently from what might be expected from the usual notion of the effects of doping and barrier height on the resistivity. As such, the results can be used as a useful guide in attempts to lower the contact resistivity.

引用

页码：282 / 287

页数：6

共 15 条

[1]

[Anonymous], 1988, SPRINGER SERIES SOLI

[2] OHMIC CONTACTS TO N-TYPE GAAS [J].