TRANSMISSION CATHODOLUMINESCENCE AS A SCREENING TECHNIQUE FOR RAKE LINES IN (AL, GA)AS DH LASER MATERIAL

被引：7

作者：

GAW, CA

REYNOLDS, CL

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 08期

关键词：

D O I：

10.1049/el:19810200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：285 / 286

页数：2

共 11 条

[1]

ANTHONY PJ, COMMUNICATION

[2]

ANTHONY PJ, UNPUBLISHED

[3]

CHIN AK, 1979, APPL PHYS LETT, V34, P476, DOI 10.1063/1.90840

[4] EVALUATION OF DEFECTS AND DEGRADATION IN GAAS-GAALAS WAFERS USING TRANSMISSION CATHODOLUMINESCENCE [J].

CHIN, AK ;

KERAMIDAS, VG ;

JOHNSTON, WD ;

MAHAJAN, S ;

ROCCASECCA, DD .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :978-983

[5] NEAR-EQUILIBRIUM LPE GROWTH OF GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURES [J].

DAWSON, LR .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :86-96

[6]

GAW CA, UNPUBLISHED

[7] CHARACTERIZATION OF (AL,GA)AS INJECTION-LASERS USING THE LUMINESCENCE EMITTED FROM THE SUBSTRATE [J].

HARTMAN, RL ;

KOSZI, LA .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5731-5744

[8] DOPING EFFECTS ON RAKE-LINE FORMATION IN LPE GROWTH OF ALXGA1-XAS DH LASERS [J].

LOGAN, RA ;

SCHUMAKER, NE ;

HENRY, CH ;

MERRITT, FR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5970-5977

[9] THRESHOLD CURRENT VARIATIONS AND OPTICAL SCATTERING LOSSES IN (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS [J].

NASH, FR ;

WAGNER, WR ;

BROWN, RL .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :3992-4005

[10] LASER-EXCITED PHOTOLUMINESCENCE OF 3-LAYER GAAS DOUBLE-HETEROSTRUCTURE LASER MATERIAL [J].

NASH, FR ;

DIXON, RW ;

BARNES, PA ;

SCHUMAKER, NE .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :234-237

← 1 2 →