HIGH-COUPLING-EFFICIENCY LASER-DIODES INTEGRATED WITH SPOT-SIZE CONVERTERS FABRICATED ON 2INCH INP SUBSTRATES

被引：13

作者：

WADA, M

KOHTOKU, M

KAWANO, K

OKAMOTO, H

KADOTA, Y

KONDO, Y

KISHI, K

KONDO, S

SAKAI, Y

KOTAKA, I

NOGUCHI, Y

ITAYA, Y

机构：

[1] NTT Opto-electronics Laboratories, Atsugi, Kanagawa, 243

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 24期

关键词：

SEMICONDUCTOR JUNCTION LASERS; INDIUM PHOSPHIDE; INTEGRATED OPTICS; OPTICAL WAVE-GUIDES;

D O I：

10.1049/el:19951437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser diodes monolithically integrated with spot-size converters operating at 1.3 mu m and having an almost circular far-field pattern and a -1.3 dB butt-coupling-loss-to-fibre with wide alignment tolerance have been successfully fabricated on 2 inch substrates. The overall device length is as short as 450 mu m.

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页码：2102 / 2104

页数：3

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