CHANNELING SCANNING-TRANSMISSION ION MICROSCOPY

被引:23
作者
CHOLEWA, M [1 ]
BENCH, G [1 ]
LEGGE, GJF [1 ]
SAINT, A [1 ]
机构
[1] UNIV MELBOURNE,SCH PHYS,MICRO ANALYT RES CTR,PARKVILLE,VIC 3052,AUSTRALIA
关键词
D O I
10.1063/1.102524
中图分类号
O59 [应用物理学];
学科分类号
摘要
Scanning transmission ion microscopy (STIM) has been used, in conjunction with channeling, to explore transmission channeling in 50-μm-thick epitaxially grown n-type silicon with 3.9 MeV H+ beam currents of 0.1 fA focused to spot sizes of less than 200 nm. The technique is extremely efficient, causes negligible damage, and is capable of very high resolution. High-resolution images of crystal damage were obtained with this first demonstration of channeling contrast in STIM.
引用
收藏
页码:1236 / 1238
页数:3
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