PT-IR SILICIDE SCHOTTKY-BARRIER IR DETECTORS

被引：34

作者：

TSAUR, BY ^{[1
]}

WEEKS, MM ^{[1
]}

PELLEGRINI, PW ^{[1
]}

机构：

[1] USAF,ROME AIR DEV CTR,BEDFORD,MA 01731

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 02期

关键词：

D O I：

10.1109/55.2055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：100 / 102

页数：3

共 13 条

[1]

CAPONE BR, 1978, 22ND INT TECH S SPIE

[2] SIMPLE MODEL FOR INTERNAL PHOTOEMISSION [J].

DALAL, VL .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) :2274-&

[3]

KIMATA M, 1987, ISSCC, P110

[4] 160X244 ELEMENT PTSI SCHOTTKY-BARRIER IR-CCD IMAGE SENSOR [J].

KOSONOCKY, WF ;

SHALLCROSS, FV ;

VILLANI, TS ;

GROPPE, JV .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (08) :1564-1573

[5] MICROSTRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDES FORMED ON SILICON [J].

OHDOMARI, I ;

KUAN, TS ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7020-7029

[6]

Pellegrini P. W., 1982, International Electron Devices Meeting. Technical Digest, P157

[7]

PELLEGRINI PW, 1987, MAY SPIE S NEW ORL

[8] FORMATION OF IRIDIUM SILICIDES FROM IR THIN-FILMS ON SI SUBSTRATES [J].

PETERSSON, S ;

BAGLIN, J ;

HAMMER, W ;

DHEURLE, F ;

KUAN, TS ;

OHDOMARI, I ;

SOUSAPIRES, JD ;

TOVE, P .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3357-3365

[9] OBSERVATIONS ON FORMATION AND ETCHING OF PLATINUM SILICIDE [J].

RAND, MJ ;

ROBERTS, JF .

APPLIED PHYSICS LETTERS, 1974, 24 (02) :49-51

[10]

Sze SM, 1981, PHYSICS SEMICONDUCTO, P250

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