SELECTIVE NUCLEATION OF SILICON CLUSTERS IN CVD

被引：3

作者：

SHI, FG

SEINFELD, JH

机构：

[1] Department of Chemical Engineering, California Institute of Technology, California 91125

来源：

JOURNAL OF MATERIALS RESEARCH | 1992年 / 7卷 / 07期

关键词：

D O I：

10.1557/JMR.1992.1809

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A nucleation model is developed that includes chemical etching of atoms as an additional loss process besides thermal dissociation that competes with the process of atom addition in forming a cluster. The model has the proper qualitative features to describe observations of the evolution of cluster formation on amorphous silicon substrates in the low pressure CVD of a mixture of SiH2Cl2/HCl/H2.

引用

页码：1809 / 1815

页数：7