ELECTRON-SPIN RESONANCE OF DANGLING BONDS IN HIGHLY DISORDERED LAYERS PRODUCED BY ION-IMPLANTATION IN GAP

被引：2

作者：

MATSUMORI, T

MIYAZAKI, K

SHIGETOMI, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 06期

关键词：

D O I：

10.1063/1.93990

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：521 / 523

页数：3

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[2] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON
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[3] HASKELL JD, 1971, 2ND P INT C IMPL SEM, P193
[4] AMORPHOUS GAP PRODUCED BY ION-IMPLANTATION
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