RESIDUAL-STRESS MEASUREMENT IN SILICON SHEET BY SHADOW MOIRE INTERFEROMETRY

被引：10

作者：

KWON, Y

DANYLUK, S

BUCCIARELLI, L

KALEJS, JP

机构：

[1] MIT,SCH ENGN,CAMBRIDGE,MA 02139

[2] MOBIL SOLAR ENERGY CORP,WALTHAM,MA 02254

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 82卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(87)90190-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：221 / 227

页数：7

共 11 条

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[2] DISLOCATION DYNAMICS OF WEB TYPE SILICON RIBBON [J].

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JOURNAL OF CRYSTAL GROWTH, 1987, 82 (1-2) :50-59

[3]

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[4] HIGH-SPEED EFG OF WIDE SILICON RIBBON [J].

KALEJS, JP ;

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SUREK, T .

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[5]

KALEJS JP, 1986, DOEJPL95631213 Q PRO

[6]

LABROPOULOS JC, 1983, J CRYSTAL GROWTH, V65, P324

[7] IMPERFECTIONS AND IMPURITIES IN EFG SILICON RIBBONS [J].

RAO, CVHN ;

CRETELLA, MC ;

WALD, FV ;

RAVI, KV .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) :311-319

[8]

SACHS E, 1984, 17TH IEEE PHOT SPEC, P1418

[9] SILICON RIBBON GROWTH BY THE DENDRITIC WEB PROCESS [J].

SEIDENSTICKER, RG ;

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[10]

Timoshenko SP, 1934, THEORY ELASTICITY

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