ELECTRICAL-PROPERTIES OF DISTRIBUTED ELECTRON-CYCLOTRON RESONANCE PLASMA-DEPOSITED SIO2-INP DIODES

Low-temperature deposition (room temperature, RT-250-degrees-C) of high-resistivity SiO2 layers has been successfully developed on InP substrates. Complete electrical characteristics of metal-insulator-semiconductor (MIS) diodes show promising characteristics in terms of barrier height at the SiO2-InP interface and in terms of interface state distribution (N(SS)). Leakage current is essentially bulk limited (rho = 4 X 10(15) OMEGA-cm) until a high electrical field in the range 4-6 MV cm-1 and a minimum value of N(SS) of 2 X 10(11) cm-2 eV-1 range is achieved, without particular surface treatment. These results show that the technique is well adapted to n-type depletion-mode MIS field-effect transistor processing.