EFFECT OF (NH4)2SX TREATMENT ON THE PASSIVATION OF GAP SURFACE

被引：5

作者：

LEE, JL ^{[1
]}

WEI, L ^{[1
]}

TANIGAWA, S ^{[1
]}

OIGAWA, H ^{[1
]}

NANNICHI, Y ^{[1
]}

机构：

[1] UNIV TSUKUBA, INST MAT SCI, TSUKUBA, IBARAKI 305, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 05期

关键词：

D O I：

10.1063/1.349354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We applied slow positrons to both as-etched GaP and (NH4)2S(x)-treated GaP. The results show that the surface of as-etched GaP is active for the adsorption of oxygen atoms when the etched surface was exposed to air for several minutes before the measurement. On the other hand, the monolayer of chemisorbed sulfur in (NH4)2S(x)-treated GaP is effective to protect the clean surface from the adsorption of the oxygen atoms. The mean diffusion length of positrons in the etched GaP is shorter than that in (NH4)2S(x)-treated GaP. This suggests that the centers for the positron trapping, such as Ga vacancies V(Ga) and/or V(Ga)-related complexes, are created by the adsorption of oxygen atoms.

引用

页码：2877 / 2879

页数：3

共 22 条

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330

[2] POSITRON-ANNIHILATION SPECTROSCOPY OF NATIVE VACANCIES IN AS-GROWN GAAS [J].

CORBEL, C ;

STUCKY, M ;

HAUTOJARVI, P ;

SAARINEN, K ;

MOSER, P .

PHYSICAL REVIEW B, 1988, 38 (12) :8192-8208

[3] INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION [J].

DANNEFAER, S ;

HOGG, B ;

KERR, D .

PHYSICAL REVIEW B, 1984, 30 (06) :3355-3366

[4] EVIDENCE FOR THE PASSIVATION EFFECT IN (NH4)2SX-TREATED GAAS OBSERVED BY SLOW POSITRONS [J].

LEE, JL ;

WEI, L ;

TANIGAWA, S ;

OIGAWA, H ;

NANNICHI, Y .

APPLIED PHYSICS LETTERS, 1991, 58 (11) :1167-1169

[5] EFFECTS OF IMPURITIES SI AND BE ON THE CREATION OF GA VACANCIES AND GA INTERSTITIALS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LEE, JL ;

WEI, L ;

TANIGAWA, S ;

KAWABE, M .

APPLIED PHYSICS LETTERS, 1991, 58 (14) :1524-1526

[6] IMPURITY EFFECT ON THE CREATION OF GA VACANCIES IN A SI-DOPED LAYER GROWN ON BE-DOPED GAAS BY MOLECULAR-BEAM EPITAXY [J].

LEE, JL ;

WEI, L ;

TANIGAWA, S ;

KAWABE, M .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) :5571-5575

[7] VACANCY-TYPE DEFECTS IN SI+-IMPLANTED GAAS AND ITS EFFECTS ON ELECTRICAL ACTIVATION BY RAPID THERMAL ANNEALING [J].

LEE, JL ;

UEDONO, A ;

TANIGAWA, S ;

LEE, JY .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (10) :6153-6158

[8] THE EFFECT OF SURFACE OXIDES ON THE CREATION OF POINT-DEFECTS IN GAAS STUDIED BY SLOW POSITRON BEAM [J].

LEE, JL ;

WEI, L ;

TANIGAWA, S ;

OIGAWA, H ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (2A) :L138-L141

[9] UNPINNING OF GAAS SURFACE FERMI LEVEL BY 200-DEGREES-C MOLECULAR-BEAM EPITAXIAL LAYER [J].

LOOK, DC ;

STUTZ, CE ;

EVANS, KR .

APPLIED PHYSICS LETTERS, 1990, 57 (24) :2570-2572

[10] VARIABLE-ENERGY POSITRON-BEAM STUDIES OF NI IMPLANTED WITH HE [J].

LYNN, KG ;

CHEN, DM ;

NIELSEN, B ;

PAREJA, R ;

MYERS, S .

PHYSICAL REVIEW B, 1986, 34 (03) :1449-1458

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